ORGANIZING COMMITTEE
June 29-July 3, 2015
20 Prospekt K. Marksa, Novosibirsk, 630073, Russia
Organizing Committee EDM 2015
Tel. +7-962-831-6555 (Reshetnikova Elena)
Tel. +7-913-792-7098 (Khristolyubova Alexandra)
E-mail: edm.conf@mail.ru
SPONSORS
Novosibirsk State Technical University
IEEE Russia Siberia Section
PARTNERS
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
Biysk Technological Institute of Altai
ORGANIZING COMMITTEE
Chairman: Sergey A. Kharitonov – Dr.Sc., Prof., Head of the Department of Electronics and Electrical Engineering, NSTU, Russia.
Co-chairmen:
Igor G. Neizvestnyi – Dr.Sc., Prof., Corresponding Member RAS, Counsellor of Rzhanov Institute of Semiconductor Physics, SB RAS, Russia;
Vladimir A.Khrustalev – Dr.Sc., Prof., Dean of the Faculty of Radio Engineering and Electronics, NSTU, Russia.
Program and Organizing Committee:
Sergey V. Brovanov – Dr.Sc., Associate Prof., Head of the Department of, NSTU, Novosibirsk, Russia;
Vladislav Yu. Vasiliev – Dr.Sc., Prof. of the Department of Semiconductors and Microelectronics, NSTU, Novosibirsk, Russia;
Helmut Weiss - Dr.Sc., Prof., Head of Institute of Electrical Engineering, Montanuniversität, Leoben, Austria;
Svetlana V. Vorobyova – Cand.Sc., Associate Prof. of the Department Radio Engineering Systems SibSUTIS, Novosibirsk, Russia;
Vladimir А. Gaisler – Dr.Sc., Prof., Head of the Department of Semiconductors and Microelectronics, NSTU, Novosibirsk, Russia;
Viktor A.Gridchin – Dr.Sc., Prof., Head of the Department of Semiconductors and Microelectronics, NSTU, Novosibirsk, Russia;
Gennady S. Evtushenko – Dr.Sc., Prof. the Department of Industrial and Medical Electronics, TPU, Tomsk, Russia;
Gennady S. Zinoviev – Dr.Sc., Prof., Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia;
Vladimir K. Makukha – Dr.Sc., Prof., Head of the Department of Electron Devices, NSTU, Novosibirsk, Russia;
Alexandr B. Markhasin - Dr.Sc., Prof., Head of the Department of Telecommunications Networks and Computing Facilities, SibSUTIS, Novosibirsk, Russia;
Evgeny V. Sypin – Cand.Sc., Associate Prof., Department of Methods and Means of Measurement and Automation of Biysk Technological Institute, Biysk, Russia;
Huawei L.Hwang – Prof., Shanghai Jiao Tong University, China;
Vladimir N.Khmelev – Dr.Sc., Prof., Rector for Scientific Work of Biysk Technological Institute, Biysk, Russia;
Natalya L. Shvarts – Cand.Sc., Head of the Group of Electronic and Microelectronic Processes Modeling Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia.
Secretaries of the Conference:
Elena V. Reshetnikova – Junior Researcher of the Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia;
Alexandra I. Khristolyubova – Assistant of the Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia;
Regina Yu. Sarakhanova - postgraduate student of the Department of Electronics and Electrical Engineering, NSTU, Novosibirsk, Russia.
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